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APTGT30X60T3G
3 Phase bridge Trench + Field Stop IGBT(R) Power Module
15 16 19 20 18 23 25 29 30 22 28 R1 31 14
VCES = 600V IC = 30A @ Tc = 80C
Application * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant
11 10 12
8 7
4 3 2 13
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 50 30 60 20 90 60A @ 550V Unit V A
July, 2007 1-5 APTGT30X60T3G - Rev 0
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT30X60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 30A Tj = 150C VGE = VCE , IC = 400A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 30A RG = 10 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 30A RG = 10 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 30A Tj = 25C RG = 10 Tj = 150C Min Typ 1600 110 50 110 45 200 40 120 50 250 60 0.16 0.3 0.7 1.05 ns Max Unit pF
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=600V
IF = 30A VGE = 0V
30 1.6 1.5 100 150 1.5 3.1 0.34 0.75
2
V ns
July, 2007 2-5 APTGT30X60T3G - Rev 0
IF = 30A VR = 300V
di/dt =1800A/s
C mJ
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APTGT30X60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 1.6 2.45 175 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT30X60T3G - Rev 0
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17
28
APTGT30X60T3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 60
TJ = 150C VGE=19V
60
TJ=25C
50
TJ=125C
50
TJ=150C
IC (A)
40 30 20 10 0 0 0.5 1
TJ=25C
40 IC (A) 30 20
VGE=13V VGE=15V
VGE=9V
10 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
60 50 40
Transfert Characteristics 2
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 10 TJ = 150C
1.5 E (mJ) IC (A) 1 0.5
TJ=25C
Eoff
30 20 10 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 2.5 2
VCE = 300V VGE =15V IC = 30A TJ = 150C TJ=125C TJ=150C
Er
Eon
0 0 10 20 30 IC (A) Reverse Bias Safe Operating Area 70 60 50 IC (A) 40 30 20
VGE=15V TJ=150C RG=10
40
50
60
Eon
E (mJ)
1.5 1 0.5
Eon
Eoff
Er
10 0 70 0
0 0 10 20 30 40 50 60 Gate Resistance (ohms)
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.7 0.9
IGBT
0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTGT30X60T3G - Rev 0
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0.5
APTGT30X60T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 10 20 IC (A) 30 40
Hard switching VCE=300V D=50% RG=10 TJ=150C Tc=85C
Forward Characteristic of diode 60 50 40 IF (A) 30 20 10
TJ=25C TJ=125C TJ=150C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W)
Diode
2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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July, 2007

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